Rohm Semiconductor Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerRohm Semiconductor
Datensätze 774
Seite 17/26
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
22.164 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
13.146 |
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Automotive, AEC-Q101 | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
22.608 |
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Automotive, AEC-Q101 | Standard | 600V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
22.212 |
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- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
23.832 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.5V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
17.232 |
|
- | Silicon Carbide Schottky | 650V | 2.15A (DC) | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
23.184 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
16.320 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
12.666 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
17.808 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
16.896 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
1.001 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO220FM |
19.992 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
20.748 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.5V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
23.712 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
8.910 |
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Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 2µA @ 25V | 12pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSD3 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 200V 200MA SSD3 |
8.946 |
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Automotive, AEC-Q101 | Standard | 200V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 2.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSD3 | 150°C (Max) |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
8.154 |
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Automotive, AEC-Q101 | Schottky | 40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSD3 | 150°C (Max) |
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Rohm Semiconductor |
RB510SM-40FH IS LOW V F |
6.192 |
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Automotive, AEC-Q101 | Schottky | 40V | 100mA | 480mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 2µA @ 40V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
RB510SM-30FH IS THE HIGH RELIABI |
5.418 |
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Automotive, AEC-Q101 | Schottky | 30V | 100mA | 460mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 300nA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
RB511SM-40FH IS SUPER LOW V |
3.258 |
|
Automotive, AEC-Q101 | Schottky | 40V | 100mA | 410mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 25µA @ 40V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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Rohm Semiconductor |
RB530SM-40FH IS THE HIGH RELIABI |
6.930 |
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Automotive, AEC-Q101 | Schottky | 40V | 100mA | 710mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 15µA @ 40V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODES |
7.128 |
|
Automotive, AEC-Q101 | Schottky | 30V | 100mA | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
RB540SM-40FH IS THE HIGH RELIABI |
7.038 |
|
Automotive, AEC-Q101 | Schottky | 40V | 200mA | 710mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 15µA @ 40V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODES |
4.788 |
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Automotive, AEC-Q101 | Schottky | 30V | 100mA | 350mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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Rohm Semiconductor |
RB521SM-60FH IS SUPRT LOW V |
5.346 |
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Automotive, AEC-Q101 | Schottky | 60V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 60V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODE |
7.650 |
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- | Schottky | 60V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 60V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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Rohm Semiconductor |
HIGH RELIABILITY AUTOMOTIVE SWIT |
2.808 |
|
Automotive, AEC-Q101 | Standard | 80V | 215mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSD3 | 150°C (Max) |
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Rohm Semiconductor |
SCHOTTKY BARRIER DIODE ULTRA SMA |
2.934 |
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- | Schottky | 30V | 100mA | 370mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 7µA @ 10V | - | Surface Mount | 0201 (0603 Metric) | SMD0603 | 150°C (Max) |
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Rohm Semiconductor |
RB510VM-30FH IS LOW V F |
4.248 |
|
Automotive, AEC-Q101 | Schottky | 30V | 100mA | 460mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 300nA @ 10V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |