ON Semiconductor Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerON Semiconductor
Datensätze 2.271
Seite 19/76
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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ON Semiconductor |
DIODE GEN PURP 600V 3A SMB |
55.878 |
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- | Standard | 600V | 3A (DC) | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 30µA @ 300V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP ULT FAST 400V 3A SMC |
18.864 |
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- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 500MA DO35 |
87.756 |
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- | Standard | 200V | 500mA | 1V @ 100mA | Standard Recovery >500ns, > 200mA (Io) | - | 25nA @ 175V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
38.256 |
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Automotive, AEC-Q101 | Schottky | 100V | 10A | 690mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 5A 5DFN |
17.382 |
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- | Schottky | 100V | 5A | 980mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 300V 5A DPAK |
26.754 |
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SWITCHMODE™ | Standard | 300V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 4A AXIAL |
12.870 |
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SWITCHMODE™ | Standard | 800V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
18.936 |
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SWITCHMODE™ | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 5A DPAK |
312 |
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- | Standard | 600V | 5A | 2.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 6A TO252-3 |
88.932 |
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- | Standard | 600V | 6A | 2.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DPAK |
19.614 |
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SWITCHMODE™ | Standard | 400V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
17.604 |
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SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
23.544 |
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SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 5A 5DFN |
92.202 |
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SWITCHMODE™ | Schottky | 100V | 5A | 730mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 1A AXIAL |
17.718 |
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SWITCHMODE™ | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
26.862 |
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SWITCHMODE™ | Standard | 800V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 8A TO220-2 |
51.756 |
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SWITCHMODE™ | Standard | 200V | 8A | 1.25V @ 22A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2L |
28.122 |
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- | Standard | 600V | 8A | 2.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220FP |
14.754 |
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SWITCHMODE™ | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 150V 8A TO220AC |
30.840 |
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SWITCHMODE™ | Standard | 150V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 10A TO220F |
14.568 |
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- | Standard | 200V | 10A | 1.15V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 8A TO220AC |
16.968 |
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- | Standard | 1000V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
14.262 |
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Stealth™ | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F |
31.260 |
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Stealth™ | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F |
25.554 |
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- | Standard | 600V | 8A | 2.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F |
165.840 |
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STEALTH™ II | Standard | 600V | 8A | 2.6V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
12.786 |
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Automotive, AEC-Q101 | Standard | 600V | 8A | 2.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO220-2L |
14.742 |
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Stealth™ | Standard | 600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | - |
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ON Semiconductor |
DIODE SCHOTTKY 50V 7.5A TO220AC |
15.852 |
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- | Schottky | 50V | 7.5A | 750mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 20A TO220F |
28.014 |
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- | Standard | 400V | 20A | 1.4V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -55°C ~ 150°C |