Monolithic Power Systems Inc. Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
HerstellerMonolithic Power Systems Inc.
Datensätze 3
Seite 1/1
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Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Monolithic Power Systems Inc. |
MOSFET 3N-CH 600V 0.08A 8SOIC |
5.004 |
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- | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | 1.3W | -20°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Monolithic Power Systems Inc. |
MOSFET 3N-CH 600V 0.08A 8DIP |
4.140 |
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- | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | 1.3W | -20°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Monolithic Power Systems Inc. |
MOSFET 3N-CH 600V 0.08A 8SOIC |
5.058 |
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- | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | 1.3W | -20°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |