Microsemi Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerMicrosemi Corporation
Datensätze 2.560
Seite 34/86
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 2KV 250MA AXIAL |
3.186 |
|
Military, MIL-PRF-19500/279 | Standard | 2000V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 2000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA D-MELF |
7.344 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 800V 5A AXIAL |
8.784 |
|
Military, MIL-PRF-19500/420 | Standard | 800V | 5A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi |
SCHOTTKY RECTIFIER |
3.508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
5.796 |
|
Military, MIL-PRF-19500/420 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 800V 3A B-MELF |
338 |
|
Military, MIL-PRF-19500/420 | Standard | 800V | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1KV 5A AXIAL |
5.796 |
|
Military, MIL-PRF-19500/420 | Standard | 1000V | 5A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 100V 300MA |
900 |
|
Military, MIL-PRF-19500/578 | Standard | 100V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 100V | - | Through Hole | Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 100V 3A D5B |
8.550 |
|
Military, MIL-PRF-19500/411 | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 440V 1.75A A-MELF |
7.398 |
|
- | Standard | 440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 220V 2A AXIAL |
6.426 |
|
Military, MIL-PRF-19500/585 | Standard | 220V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | Axial | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURPOSE |
2.736 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURPOSE |
5.472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
8.766 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
4.212 |
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Military, MIL-PRF-19500/411 | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE RECT ULT FAST REC A-PKG |
7.236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 880V 1A D5A |
2.682 |
|
Military, MIL-PRF-19500/585 | Standard | 880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi |
SWITCHING DIODE |
8.838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 100V 3A B-MELF |
2.214 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
6.102 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microsemi |
DIODE RECT ULT FAST REC A-PKG |
2.700 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GP 125V 150MA DO213AA |
6.678 |
|
Military, MIL-PRF-19500/241 | Standard, Reverse Polarity | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
5.184 |
|
Military, MIL-PRF-19500/424 | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 2µA @ 200V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 40V 3A AXIAL |
4.536 |
|
Military, MIL-PRF-19500/620 | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | B, Axial | - | -65°C ~ 125°C |
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Microsemi |
DIODE RECT ULT FAST REC A-PKG |
5.706 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 1.1KV 1A A-MELF |
3.168 |
|
- | Standard | 1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 200V 5A AXIAL |
448 |
|
Military, MIL-PRF-19500/420 | Standard | 200V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 150V 850MA AXIAL |
114 |
|
- | Standard | 150V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
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Microsemi |
DIODE GEN PURP 50V 1A AXIAL |
4.086 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1KV 1A D5A |
7.956 |
|
Military, MIL-PRF-19500/427 | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |