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Millionen elektronischer Teile auf Lager. Preis- und Vorlaufzeitangebote innerhalb von 24 Stunden.

Micron Technology Inc. Speicher

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KategorieHalbleiter / Speicher-ICs / Speicher
HerstellerMicron Technology Inc.
Datensätze 8.604
Seite 51/287
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Speichertyp
Speicherformat
Technologie
Speichergröße
Speicherschnittstelle
Taktfrequenz
Schreibzykluszeit - Wort, Seite
Zugriffszeit
Spannung - Versorgung
Betriebstemperatur
Montagetyp
Paket / Fall
Lieferantengerätepaket
MT29F2T08EMHAFJ4-3T:A TR
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
7.632
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT53E1536M32D4DT-046 AIT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
4.338
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4SQ-046 AIT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
7.182
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1536M32D4DT-046 AIT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
8.010
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4SQ-046 AIT:A
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
4.734
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT28HL32GQBB6EBL-0GCT
Micron Technology Inc.
NOR FLASH 512MX64 PLASTIC 3.3V
3.096
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZBD9DQKPR-046 W.9M9 TR
Micron Technology Inc.
IC FLASH MEM 16.75G X64 MCP
7.506
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZBD9DQKPR-046 W.9M9
Micron Technology Inc.
IC FLASH MEM 16.75G X64 MCP
2.011
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT44K32M36RB-093E:A TR
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 168BGA
8.982
-
Volatile
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT44K64M18RB-093E:A TR
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 168BGA
6.336
-
Volatile
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT44K32M36RB-093E:A
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 1067MHZ
3.237
-
Volatile
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT44K64M18RB-093E:A
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 1067MHZ
6.304
-
Volatile
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MTFC128GAPALNS-IT TR
Micron Technology Inc.
MODULE EMMC 128GB
4.482
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTFC128GAPALNS-IT
Micron Technology Inc.
MODULE EMMC 128GB
79
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F1T208ECHBBJ4-3R:B TR
Micron Technology Inc.
IC FLASH 1.125T PARALLEL 333MHZ
7.074
-
Non-Volatile
FLASH
FLASH - NAND
1.125Tb (144G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F128G08AMCDBJ5-6ITR:D
Micron Technology Inc.
IC FLASH 128G PARALLEL 167MHZ
5.364
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
-
132-TBGA (12x18)
MT29F128G08AMCDBJ5-6ITR:D TR
Micron Technology Inc.
IC FLASH 128G PARALLEL 167MHZ
4.842
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
-
132-TBGA (12x18)
MT53E1536M32D4DT-046 AAT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
2.718
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4SQ-046 AAT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
3.490
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1536M32D4DT-046 AAT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
7.488
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4SQ-046 AAT:A
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
5.202
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTA9ASF1G72PZ-2G9E1
Micron Technology Inc.
IC DRAM 72G PARALLEL 1467MHZ
39
-
Volatile
DRAM
SDRAM - DDR4
72Gb (1G x 72)
Parallel
1467MHz
-
-
1.2V
0°C ~ 95°C (TC)
-
-
-
MT53E1G64D4SQ-046 WT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
4.194
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E2G32D4DT-046 WT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
6.048
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1G64D4SQ-046 WT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
2.016
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E2G32D4DT-046 WT:A
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
6.864
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT44K64M18RB-083F:A
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 1200MHZ
4.374
-
Volatile
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
1200MHz
-
6.67ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT44K64M18RB-083F:A TR
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 1200MHZ
8.568
-
Volatile
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
1200MHz
-
6.67ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT29F128G08AKCABH2-10Z:A TR
Micron Technology Inc.
IC FLASH 128G PARALLEL 100TBGA
8.352
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
MT29F128G08AKCABH2-10Z:A
Micron Technology Inc.
IC FLASH 128G PARALLEL 100TBGA
7.956
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)