Microchip Technology Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrochip Technology
Datensätze 185
Seite 5/7
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microchip Technology |
MOSFET N-CH 100V 1.2A TO92-3 |
18.384 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Tj) | 5V, 10V | 350mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 350V 0.086A TO92-3 |
21.408 |
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- | P-Channel | MOSFET (Metal Oxide) | 350V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 350V 0.231A SOT89-3 |
3.276 |
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- | P-Channel | MOSFET (Metal Oxide) | 350V | 231mA (Tj) | 3V, 10V | 15Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 100V 0.2A SOT23-3 |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Tj) | 5V, 10V | 4Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 50pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
6.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 100V 0.48A SOT89-3 |
3.472 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 480mA (Tj) | 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 60V 0.41A TO39-3 |
6.516 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 410mA (Ta) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 24V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microchip Technology |
MOSFET N-CH 120V 0.23A TO92-3 |
2.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 120V | 230mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±30V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
4.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
8.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
6.354 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
2.862 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
7.542 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
5.364 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
2.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 250V 0.215A TO92-3 |
4.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 215mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 740mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3 |
5.616 |
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- | P-Channel | MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3 |
6.570 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
4.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
6.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
6.552 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
2.808 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
4.770 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
4.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
3.420 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3 |
2.070 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
5.076 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |