GeneSiC Semiconductor Gleichrichter - Arrays
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Arrays
HerstellerGeneSiC Semiconductor
Datensätze 906
Seite 16/31
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodenkonfiguration | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Strom - Durchschnitt gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Betriebstemperatur - Verbindungsstelle | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 200A 3 TOWER |
6.948 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 200A | 880mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 200A 3 TOWER |
3.384 |
|
- | 1 Pair Common Anode | Schottky | 150V | 200A | 880mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
3.330 |
|
- | 1 Pair Common Cathode | Standard | 1200V | 100A | 2.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN 1.2KV 100A 3 TOWER |
7.542 |
|
- | 1 Pair Common Anode | Standard | 1200V | 100A | 2.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
8.190 |
|
- | 1 Pair Common Cathode | Standard | 200V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 100A 3 TOWER |
7.560 |
|
- | 1 Pair Common Anode | Standard | 200V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
5.148 |
|
- | 1 Pair Common Cathode | Standard | 400V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 100A 3 TOWER |
8.910 |
|
- | 1 Pair Common Anode | Standard | 400V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
2.772 |
|
- | 1 Pair Common Cathode | Standard | 600V | 100A | 1.7V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 100A 3 TOWER |
6.444 |
|
- | 1 Pair Common Anode | Standard | 600V | 100A | 1.7V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 400V 400A 3TOWER |
7.398 |
|
- | 1 Pair Common Cathode | Standard | 400V | 400A (DC) | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 50V 400A 3TOWER |
2.322 |
|
- | 1 Pair Common Cathode | Standard | 50V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 50V 400A 3TOWER |
2.880 |
|
- | 1 Pair Common Anode | Standard | 50V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
3.600 |
|
- | 1 Pair Common Cathode | Standard | 100V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
7.650 |
|
- | 1 Pair Common Anode | Standard | 100V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 200V 400A 3TOWER |
3.726 |
|
- | 1 Pair Common Cathode | Standard | 200V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 200V 400A 3TOWER |
6.048 |
|
- | 1 Pair Common Anode | Standard | 200V | 400A (DC) | 1.3V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 600V 400A 3TOWER |
2.718 |
|
- | 1 Pair Common Cathode | Standard | 600V | 400A (DC) | 1.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 600V 400A 3TOWER |
3.780 |
|
- | 1 Pair Common Anode | Standard | 600V | 400A (DC) | 1.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 200A 3 TOWER |
2.700 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 200A | 920mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 200A 3 TOWER |
5.112 |
|
- | 1 Pair Common Anode | Schottky | 200V | 200A | 920mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 250A 3 TOWER |
2.430 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 250A | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 250A 3 TOWER |
2.250 |
|
- | 1 Pair Common Anode | Schottky | 150V | 250A | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 1.6KV 600A 3TOWER |
5.274 |
|
- | - | - | 1600V | 600A (DC) | - | Standard Recovery >500ns, > 200mA (Io) | - | - | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 1KV 600A 3TOWER |
2.160 |
|
- | 1 Pair Common Cathode | Standard | 1000V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 1.2KV 600A 3TOWER |
4.320 |
|
- | 1 Pair Common Cathode | Standard | 1200V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 1.4KV 600A 3TOWER |
4.482 |
|
- | 1 Pair Common Cathode | Standard | 1400V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 1.6KV 600A 3TOWER |
4.986 |
|
- | - | - | 1600V | 600A (DC) | - | Standard Recovery >500ns, > 200mA (Io) | - | - | -55°C ~ 150°C | Chassis Mount | 3-SMD Module | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 600V 600A 3TOWER |
8.406 |
|
- | 1 Pair Common Cathode | Standard | 600V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 800V 600A 3TOWER |
5.220 |
|
- | 1 Pair Common Cathode | Standard | 800V | 600A (DC) | 1.2V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |