SIR642DP-T1-GE3 Datenblatt
![SIR642DP-T1-GE3 Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0001.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0002.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0003.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0004.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0005.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0006.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0007.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0008.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0009.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 10](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0010.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 11](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0011.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 12](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0012.webp)
![SIR642DP-T1-GE3 Datenblatt Seite 13](http://pneda.ltd/static/datasheets/images/25/sir642dp-t1-ge3-0013.webp)
Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 60A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 4155pF @ 20V FET-Funktion - Verlustleistung (max.) 4.8W (Ta), 41.7W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket PowerPAK® SO-8 Paket / Fall PowerPAK® SO-8 |
Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 30A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1155pF @ 15V FET-Funktion - Verlustleistung (max.) 4.8W (Ta), 41.7W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket PowerPAK® SO-8 Paket / Fall PowerPAK® SO-8 |