SI4963BDY-T1-GE3 Datenblatt
![SI4963BDY-T1-GE3 Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0001.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0002.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0003.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0004.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0005.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0006.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0007.webp)
![SI4963BDY-T1-GE3 Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/29/si4963bdy-t1-ge3-0008.webp)
Hersteller Vishay Siliconix Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.9A Rds On (Max) @ Id, Vgs 32mOhm @ 6.5A, 4.5V Vgs (th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds - Leistung - max 1.1W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Vishay Siliconix Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.9A Rds On (Max) @ Id, Vgs 32mOhm @ 6.5A, 4.5V Vgs (th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds - Leistung - max 1.1W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |