NTMFS4854NST3G Datenblatt
ON Semiconductor Hersteller ON Semiconductor Serie SENSEFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 15.2A (Ta), 149A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 3.2V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 11.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 4830pF @ 12V FET-Funktion - Verlustleistung (max.) 900mW (Ta), 86.2W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket SO-8FL Paket / Fall 8-PowerTDFN |
ON Semiconductor Hersteller ON Semiconductor Serie SENSEFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 15.2A (Ta), 149A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 3.2V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 11.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 4830pF @ 12V FET-Funktion - Verlustleistung (max.) 900mW (Ta), 86.2W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket SO-8FL Paket / Fall 8-PowerTDFN |