NTLJD4150PTBG Datenblatt
NTLJD4150PTBG Datenblatt
Total Pages: 7
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ON Semiconductor
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NTLJD4150PTBG
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Hersteller ON Semiconductor Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 1.8A Rds On (Max) @ Id, Vgs 135mOhm @ 4A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 300pF @ 15V Leistung - max 700mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 6-WDFN Exposed Pad Lieferantengerätepaket 6-WDFN (2x2) |