NTD3813NT4G Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.6A (Ta), 51A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.75mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 4.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 963pF @ 12V FET-Funktion - Verlustleistung (max.) 1.2W (Ta), 34.9W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DPAK Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.6A (Ta), 51A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.75mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 4.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 963pF @ 12V FET-Funktion - Verlustleistung (max.) 1.2W (Ta), 34.9W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Through Hole Lieferantengerätepaket I-PAK Paket / Fall TO-251-3 Stub Leads, IPak |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.6A (Ta), 51A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.75mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 4.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 963pF @ 12V FET-Funktion - Verlustleistung (max.) 1.2W (Ta), 34.9W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Through Hole Lieferantengerätepaket I-PAK Paket / Fall TO-251-3 Short Leads, IPak, TO-251AA |
