IRLI640G Datenblatt
|
Hersteller Vishay Siliconix Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.9A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 180mOhm @ 5.9A, 5V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±10V Eingangskapazität (Ciss) (Max) @ Vds 1800pF @ 25V FET-Funktion - Verlustleistung (max.) 40W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220-3 Paket / Fall TO-220-3 Full Pack, Isolated Tab |
Hersteller Vishay Siliconix Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.9A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 180mOhm @ 5.9A, 5V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±10V Eingangskapazität (Ciss) (Max) @ Vds 1800pF @ 25V FET-Funktion - Verlustleistung (max.) 40W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220-3 Paket / Fall TO-220-3 Full Pack, Isolated Tab |
