DMT3009LFVWQ-13 Datenblatt
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Hersteller Diodes Incorporated Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 12A (Ta), 50A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 3.8V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 823pF @ 15V FET-Funktion - Verlustleistung (max.) 2.3W (Ta), 35.7W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount, Wettable Flank Lieferantengerätepaket PowerDI3333-8 (SWP) Type UX Paket / Fall 8-PowerVDFN |
Hersteller Diodes Incorporated Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 12A (Ta), 50A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 3.8V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 823pF @ 15V FET-Funktion - Verlustleistung (max.) 2.3W (Ta), 35.7W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount, Wettable Flank Lieferantengerätepaket PowerDI3333-8 (SWP) Type UX Paket / Fall 8-PowerVDFN |
