AON6411_001 Datenblatt
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Hersteller Alpha & Omega Semiconductor Inc. Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 47A (Ta), 85A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V Vgs (th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) ±12V Eingangskapazität (Ciss) (Max) @ Vds 10290pF @ 10V FET-Funktion - Verlustleistung (max.) 7.3W (Ta), 156W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-DFN (5x6) Paket / Fall 8-PowerSMD, Flat Leads |
Hersteller Alpha & Omega Semiconductor Inc. Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 47A (Ta), 85A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V Vgs (th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) ±12V Eingangskapazität (Ciss) (Max) @ Vds 10290pF @ 10V FET-Funktion - Verlustleistung (max.) 7.3W (Ta), 156W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-DFN (5x6) Paket / Fall 8-PowerSMD, Flat Leads |
